| PART |
Description |
Maker |
| K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232 |
512Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| WED3DL3216V WED3DL3216V10BC WED3DL3216V10BI WED3DL |
16Mx32 SDRAM
|
WEDC[White Electronic Designs Corporation]
ETC
|
| K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| W641GG2JB |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| HYB18H1G321AF-10 HYB18H1G321AF-11 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HMD16M32M8G HMD16M32M8G-5 HMD16M32M8G-6 |
64Mbyte(16Mx32) 72-pin FP Mode 4K Ref. SIMM Design 5V 64Mbyte6Mx322针计划生育模K的参考。上海药物研究所设计5V
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12 HSD16M3 |
Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|
| HYB18H512321BF-11/12/14 HYB18H512321BF-08/10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda
|
